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LM4050/LM4051
50ppm/°C Precision Micropower Shunt Voltage
References with Multiple Reverse Breakdown Voltages
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS—1.225V
(IR = 100A, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Reverse Current (cathode to anode) ..................................20mA
Forward Current (anode to cathode) ..................................10mA
Continuous Power Dissipation (TA = +70°C)
3-Pin SC70 (derate 2.17mW/°C above +70°C) ............174mW
3-Pin SOT23 (derate 4.01mW/°C above +70°C)..........320mW
Operating Temperature Range
LM4050/LM4051_E_ _ _ ................................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s)..................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
LM4051A (0.1%)
1.2238
1.2250
1.2262
LM4051B (0.2%)
1.2226
1.2250
1.2275
Reverse Breakdown Voltage
VR
TA = +25
°C
LM4051C (0.5%)
1.2189
1.2250
1.2311
V
LM4051A
±1.2
±7
LM4051B
±2.4
±9
Reverse Breakdown Voltage
Tolerance (Note 2)
VRTOL
LM4051C
±6.0
±12
mV
Minimum Operating Current
IRMIN
45
60
A
IR = 10mA
±20
IR = 1mA
±15
±50
Average Reverse Voltage
Temperature Coefficient
(Notes 2, 3)
VR/T
IR = 100A
±15
ppm/
°C
IRMIN
≤ IR ≤ 1mA
0.7
1.5
Reverse Breakdown Voltage
Change with Operating
Current Change
1mA
≤ IR ≤ 12mA
2.5
8.0
mV
Reverse Dynamic
Impedance (Note 3)
ZR
IR = 1mA, f = 120Hz, IAC = 0.1IR
0.5
1.5
Wideband Noise
eN
IR = 100A, 10Hz
≤ f ≤ 10kHz
20
VRMS
Reverse Breakdown Voltage
Long-Term Stability
VR
T = 1000h
120
ppm
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